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| CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2005.04.15 Page No. : 1/5 BTD1816J3 Features * Low collector-to-emitter saturation voltage * High-speed switching * Large current capability * Good linearity of hFE * High fT Applications * Suitable for relay drivers, high speed inverters, converters, and other high current switching applications. Symbol BTD1816J3 Outline TO-252 BBase CCollector EEmitter BC B C EE BTD1816J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25C Power Dissipation @ TC=25C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RJA RJC Tj Tstg Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2005.04.15 Page No. : 2/5 Limits 120 100 6 4 8 (Note 1) 1.2 1 20 125 6.25 150 -55~+150 Unit V V V A A W C/W C/W C C Note : 1. Single Pulse , Pw380s,Duty2%. Characteristics (Ta=25C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE 1 *hFE 2 fT Cob ton tstg tf Min. 120 100 6 180 120 Typ. 110 150 0.9 180 40 100 900 50 Max. 1 1 200 400 1.2 820 Unit V V V A A mV mV V MHz pF ns ns ns Test Conditions IC=10A, IE=0 IC=1mA, IB=0 IC=10A, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 IC=1A, IB=50mA IC=2A, IB=200mA IC=2A, IB=200mA VCE=5V, IC=500mA VCE=5V, IC=3A VCE=10V, IC=500mA VCB=10V, f=1MHz VCC=50V, IC=10IB1=-10IB2=2A, RL=25 *Pulse Test : Pulse Width 380s, Duty Cycle2% 41 Classification of hFE 1 Rank Range R 180~390 S 270~560 T 390~820 BTD1816J3 CYStek Product Specification CYStech Electronics Corp. Characteristics Current Gain vs Collector Current 1000 VCE=5V Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2005.04.15 Page No. : 3/5 Saturation Voltage vs Collector Current 10000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE 1000 IC=20IB IC=50IB IC=100IB 100 VCE=2V VCE=1V 100 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) 1000 On Vottage vs Collector Current VBE(SAT) @ IC=10IB On Voltage---(mV) VBE(ON)@VCE=5V 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 100 1 10 100 1000 Collector Current---IC(mA) 10000 Grounded Emitter Output Characteristics 3.5 IB=8mA Grounded Emitter Output Characteristics 8 IB=80mA IB=90mA IB=40mA IB=100mA IB=70mA IB=50mA IB=30mA IB=20mA IB=10mA IB=7mA IB=5mA IB=2mA IB=0mA 3 Collector Current---IC(A) 7 Collector Current---IC(A) 6 5 4 3 2 1 IB=0mA IB=60mA 2.5 2 1.5 1 0.5 0 0 IB=5mA IB=1mA 0 10 2 4 6 8 Collector-to-Emitter Voltage---VCE(V) 0 1 2 3 4 Collector-to-Emitter Voltage---VCE(V) 5 BTD1816J3 CYStek Product Specification CYStech Electronics Corp. Characteristics(Cont.) Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA() Power Dissipation---PD(W) 25 20 15 10 5 0 0 Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2005.04.15 Page No. : 4/5 Power Derating Curve 50 100 150 Case Temperature---TC() 200 BTD1816J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C821J3 Issued Date : 2005.03.29 Revised Date :2005.04.15 Page No. : 5/5 Marking: B L F G D D1816 3 H E K 2 I 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1816J3 CYStek Product Specification |
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